The consumer electronics giant Samsung has announced the production of 32-gigabit MLC NAND, produced using the 20nm fabrication, making them the first to use 20nm fabrication. So far other companies including Intel/Micron and Toshiba have only been talking about it.
This 8GB capacity 20nm MLC NAND is tageted at high-performance applications such as SDHC flash cards and solid-state memory for smartphones. It was just a year ago that Samsung became the first to move to 30nm fabrication.
Samsung claims its 20nm-based SD card offers 30% faster performance over existing 30nm-based SD cards, featuring a sustained write speed of at least 10MB/s and read speed of 20MB/s. This card will also carry a Class 10 rating. As with each reduction in physical size, this in-turn allows more capacity to fit in the same physical space, allowing for higher capacity flash cards.
Thanks to this latest fabrication methodology, Samsung’s high-density 32-gigabit [speed], 8GB [capacity] MLC [multilevel cell] NAND puts the Korea-based company in the lead at this time for producing solid-state memory processors for smartphones, high-end IT applications and high-performance memory cards.
Samsung is advancing its fab capabilities quickly. Only one year ago, the company was the first to move to the 30nm fabrication process.
So far there has not been any announcement about using 20nm NAND in SSDs, but if the production becomes cost-effective or even lower than 32nm production, it will not be long before we see SSDs using 20nm NAND. In the meantime, with the tight space limitation of SDHC cards, especially microSD cards, these will surely benefit from the new 20nm technology.